( PR4US.com | Press Release | 2020-11-16 22:46:08 )
Seoul Korea, Nov 16, 2020. BeRex today announces the availability of the BNT21, a broadband, GaAs E-pHEMT amplifier that is ideal for applications demanding high linearity & low noise figure in a wideband of 50-6000MHz. The BNT21 is internally matched at 50 ohms. It is available in RoHS2 compliant DFN 8L 2mm x 2 mm surface mount package.
The BNT21 can be used in fast shutdown switching speed for TD-LTE and TD 5G NR applications. The BNT21 can be used at either 5V or 3.3V Supply Voltage. Typical performance at 5V/3.3V at 3500MHz is 18/17dB gain, 37/32dBm Output IP3, 19/15dB Output P1dB, 8.7/5.7dBm 5G NR ACLR measured at -50dBc, and 1.5dB noise figure.
At the operating frequency of 4650MHz, the performance is: 17.7/16.9dB gain, 38/29.7dBm Output IP3, 18.2/14.7dB Output P1dB, 8.8/5dBm 5G NR ACLR measured at -50dBc, and 1.8/2dB noise figure.
At the operating frequency of 5800MHz the performance is: 18.5/17.9dB gain, 35/27.9dBm Output IP3, 18.1/14.9dB Output P1dB, 7.1/4dBm 5G NR ACLR measured at -50dBc, and 2.1/2dB noise figure.
Hun Soo Shin, Product Marketing Manager said, “The BNT21 shows excellent performance at frequencies over 4GHz.” Mr. Shin continued, “BeRex aims to enter the world-class RF Semiconductor market segment by developing best-in-class 5G components using gallium arsenide, gallium nitrogen, silicon-germanium and CMOS technologies that provide compelling performance to cost ratios for 5G RF solutions.”
Pricing and Availability
The BNT21 is currently available and is competitively priced. Samples are available upon request. Additional information about these and other BeRex products is available on the company website: www.berex.com
BeRex, founded in 2004, is headquarter in Seoul Korea where it designs, manufactures, and sells a broad range of RF and microwave GaAs and SiGe semiconductor devices worldwide.
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